Table 1 Division of the transfer characteristic according to the applied potential and the appropriate EDL.
From: Functionalization of an extended-gate field-effect transistor (EGFET) for bacteria detection
Section | Applied voltage | EDL |
---|---|---|
I | UCS < 0 V; Forward sweep | Reduction |
II | UCS > 0 V; Forward sweep | Formation |
III | UCS > 0 V; Backward sweep | Reduction |
IV | UCS < 0 V; Backward sweep | Formation |