Table 1 Division of the transfer characteristic according to the applied potential and the appropriate EDL.

From: Functionalization of an extended-gate field-effect transistor (EGFET) for bacteria detection

Section

Applied voltage

EDL

I

UCS < 0 V; Forward sweep

Reduction

II

UCS > 0 V; Forward sweep

Formation

III

UCS > 0 V; Backward sweep

Reduction

IV

UCS < 0 V; Backward sweep

Formation