Table 2 Carbon concentration in the ALD Al2O3 films grown at 80, 100, 150, and 250 ℃.

From: Influence of growth temperature on dielectric strength of Al2O3 thin films prepared via atomic layer deposition at low temperature

 

T80

T100

T150

T250

C (atom%)

1.8

1.3

1.0

0.8

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