Figure 2 | Scientific Reports

Figure 2

From: Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Figure 2

(a) XPS depth profile showing atomic concentration in the DCS-based USRN films from depth at surface of ~ 10 to ~ 160 nm into the film. Si 2p shows atomic concentration ~ 83% while N 1s shows atomic concentration ~ 11%, indicating Si:N ratio ~ 8:1. We infer that the film composition is Si8N. There are minimal O 1s (~ 2%) and Cl 2p (~ 3%) in the film. (b) Narrow scan XPS spectrum from 103 to 96 eV binding energies revealing Si 2p peak. This spectrum is further deconvoluted to identify Si–Si peak and Si–N peak. XPS background has been taken into account of. (c) Narrow scan XPS spectrum from 400 to 392 eV binding energies showing N 1s peak at ~ 396.5 eV, typical binding energy of N in Si–N films, indicating N elements bonded to Si elements in DCS-based USRN (Si8N) film. XPS background has been taken into account of.

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