Table 1 Summary of Si–H and N–H bond concentrations from DCS-based and SiH4-based USRN films, showing the percentage change in bond concentrations for DCS-based USRN film when compared to SiH4-based USRN film.

From: Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Film description

Bond concentration (cm−3)

[N–H]/[Si–H]

Si–H

N–H

Si–H and N–H

DCS-based USRN film (this work)

1.47 × 1022

2.80 × 1022

4.27 × 1022

1.91

SiH4-based USRN film (prepared based on Ref.28)

2.45 × 1022

2.42 × 1022

4.87 × 1022

0.99

% Change in bond concentration

40% (decrease)

15% (increase)

12% (decrease)

 
  1. The bond concentration ratios [N–H]/[Si–H] are also calculated for both films.
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