Table 2 Comparison of quality factors extracted from DCS-based USRN resonators (in this work) with SiH4-based USRN resonators (Ref.9).

From: Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Quality factor

DCS-based USRN (Fig. 5)

DCS-based USRN (Fig. 6)

SiH4-based USRN9

Intrinsic

\(\sim 1.37\times {10}^{5}\)

\(\sim 1.53\times {10}^{5}\)

\(\sim 6.0\times {10}^{4}\)

Loaded

\(\sim 1.1\times {10}^{5}\)

\(\sim 1.22\times {10}^{5}\)

\(\sim 4.5\times {10}^{4}\)

Finesse

 ~ 75

 ~ 77

 
  1. The finesse of the DCS-based USRN devices are also calculated here.
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