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Figure 1

From: Experimental validation of state equations and dynamic route maps for phase change memristive devices

Figure 1

Mushroom-type PCM device and memristive characteristics. (a) Schematic representation of a mushroom-type PCM device operated with an integrated current compliance series resistor \(R_\text {s}\). When the amorphous phase blocks the bottom electrode, the device is in a high-resistance state. The effective thickness of the amorphous region is denoted by \(u_{\text {a}}\). \(V_{\text {applied}}\) is the externally applied input voltage, I is the current flowing through the PCM device and \(V_{\text {cell}}=V_\text {applied}-R_\text {s}I\) is the intrinsic voltage drop on the device. (b) The measured current-voltage relationship on the mushroom-type PCM device highlighting the pinched hysteresis loop characteristic of memristive devices.

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