Figure 4
Effective thermal resistance and crystal growth velocity. (a) The effective thermal resistance of a mushroom-type PCM device as a function of the amorphous thickness \(u_{\text {a}}\). This is obtained from Finite-element modeling that was also experimentally corroborated by Sebastian et al.19. Also shown is a linear approximation of the effective thermal resistance in the scenario where the bottom-electrode is fully blocked by the amorphous region (dashed-red line). (b) The experimentally measured crystal growth velocity \(v_{\text {g}}(T_{\text {int}})\) as a function of the interface temperature \(T_{\text {int}}\) based on Sebastian et al.19. Also shown is a Gaussian approximation (dashed-red line).
