Figure 5 | Scientific Reports

Figure 5

From: Experimental validation of state equations and dynamic route maps for phase change memristive devices

Figure 5

Electrical subsystem. (a) The measured \(I-V_\text {cell}\) characteristics of the device when write pulses of different reset currents \(I_\text {RESET}\) are applied. It can be seen that beyond \(I=\) 100 \(\mu\)A, \(V_{\text {cell}}\) plateaus to approx. 0.8 V. (b) The low-field \(I-V_{\text {cell}}\) characteristics are measured after the application of each write pulse. An almost linear behavior is observed. Moreover, the resistance progressively increases with increasing \(I_\text {RESET}\). (c) During the application of the write pulse, the PCM device can be modeled as an ideal voltage generator \(V_\text {cell,ON}\). (d) During read when probing the phase-configuration of the device, the PCM device can be modeled as a state-dependent linear resistor.

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