Figure 1
From: Unity yield of deterministically positioned quantum dot single photon sources
(a) Optical image of a 10 \(\times\) 10 array of InP photonic nanowires. (b) Scanning electron microscopy (SEM) image viewed at 40\(^\circ\) of the same array with (c) showing a higher magnification image of a single nanowire. Scale bars are 10 and 1 \(\upmu\)m, respectively. (d) Transmission electron microscopy image of the InAsP quantum dot embedded within a nanowire. Scale bar is 5 nm. Spatially-resolved photoluminescence (PL) from the array in (a) showing emission from (e) the InP photonic nanowire waveguide and (f) the embedded quantum dot. (g) Spectrally-resolved emission from a single device (red curve) showing InP nanowire (NW) and InAsP quantum dot (QD) emission. The NW shows band-to-band emission from wurtzite (WZ) InP as well as emission from stacking faults (SFs) and donor–acceptor (D–A) levels. Emission from the substrate (grey curve) shows two broad features at 875 nm and 900 nm associated with band-to-band and D-A recombination, respectively, in zincblende (ZB) InP.
