Figure 1
From: Tunability of the bandgap of SnS by variation of the cell volume by alloying with A.E. elements
Variation in the bandgap of typical semiconductors and the uncommon behaviour of SnS and GeS. (a) Volume dependence of direct bandgap in compound semiconductor materials calculated with GGA-PBE between 0 and 8 GPa. Black and blue lines represent zinc-blende and wurtzite structures, respectively. (b) Coordination structure of cations in Pnma-type SnS and GeS. Relationships between (c) unit cell volume and bandgap (thin and thick lines denote indirect and direct bandgaps, respectively), (d) unit cell volume and effective coordination number (ECoN), and (e) ECoN and bandgap of SnS and GeS. Closed marks indicate the values at 0 GPa.
