Table 3 Comparison between the proposed Memristor design and the relevant Memristors presented in literature.
From: Memristor-based PUF for lightweight cryptographic randomness
Relevant TRNGs/PUFs designs in the literature | Performed NIST tests | Authors/references |
---|---|---|
Memristive read and write PUF | –N/A– | |
N-bit read and write Memristive PUF (M-PUF) | –N/A– | |
Hybrid memristor-CMOS PUF | –N/A– | |
Nanocrossbar memristor PUF | –N/A– | |
W/TiN/TiON/SiO2/Si memristor | –N/A– | |
Cu/AlOx and Ti/HfOx memristors | –N/A– | |
TaOx-based devices | All 15 NIST tests | |
(expensive quality bits generated) | Â | |
Pt/Ag/Ag:SiO2/Pt memristor | All 15 NIST tests (complex device Structure) | |
(complex device Structure) | Â | |
RRAM TRNGs | 12 NIST tests | |
Cu/HfO\(_{2-x}/p^{++}\)Si Memristor | All 15 combined with the literature | MR-PUF TRNG proposed in this paper |
three additional tests using efficient and low cost structure | Â |