Figure 2
Growth of nitrogen doped graphene (G:N). (a) Image of the discharge plasma glow in nitrogen for copper nitridation and schematic of the graphene:N growth process using the Cu:Nx cluster (nitrogen solid source) in-situ prepared before growth. (b) Optical emission spectroscopy of the active species in the downstream of the N2 plasma. The emission intensity of first positive system (600–900 nm) is a measure of the N-atoms. (c) Raman spectra and optical microscopy of G:N on copper foil. The microscopy image shows the edge of the graphene grain as decorated (the dark line) by the copper oxide after long time exposure of the graphene covered copper foil to wet-air. The Raman spectra are collected from three different positions of the single grain: at the grain boundary (the black line), thus evidencing the copper oxide and within the grain for the wide single layer region (the blue line) and for the small bilayer island at the centre of the grain (the red line).
