Figure 5
source and drain (Rsd) as a function of gate voltage (Vg) taken after thermal annealing (T = 200 °C) and in vacuum. The data in red and black are for irradiated graphene:N and pristine graphene, respectively. The inset shows the gold electrodes configuration of the FET device on SiO2/Si (channel length = 0.8 mm, width = 8 mm). The size of the single layer graphene:N is about 15 × 15 mm2.
(a) Kinetics of sheet resistance change of G:N single layer on SiO2/Si substrate submitted to irradiation in air with a Xe-lamp. The sheet resistance stabilizes to its lowest value after about 3 h. The decrease, as soon as the lamp is turned off, is due to the thermal coefficient of the resistance. The inset shows the 4-probe Van der Pauw configuration. (b) Plot of the resistance between
