Figure 6
From: New ternary inverter with memory function using silicon feedback field-effect transistors

(a,b) Logic retention, and (c,d) endurance characteristics of the ternary inverter in each of MW1 and MW2.
From: New ternary inverter with memory function using silicon feedback field-effect transistors

(a,b) Logic retention, and (c,d) endurance characteristics of the ternary inverter in each of MW1 and MW2.