Table 2 Hall effect measurements for SnOx samples of each annealed series.
From: Study of wide bandgap SnOx thin films grown by a reactive magnetron sputtering via a two-step method
Series | Best conductive O2:Ar (%) | Mobility (cm2/V s) | Charge carrier (cm−3) |
|---|---|---|---|
As deposited at 100 °C/Vacuum annealed | 0.5 | 1.07 | 1.47 × 1019 |
As deposited at 250 °C/Vacuum annealed | 1.5 | 7.77 | 5.84 × 1018 |
As deposited at 100 °C/Air annealed | 0 | 2.11 | 1.39 × 1019 |
As deposited at 250 °C/Air annealed | 0 | 2.58 | 1.26 × 1019 |
