Figure 10
From: Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips

The FIB cross-sectional metallographs of the sputtered Cu films deposited with substrate bias of − 150 V on Si substrate.
From: Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips

The FIB cross-sectional metallographs of the sputtered Cu films deposited with substrate bias of − 150 V on Si substrate.