Figure 2
From: Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET
Schematic of the charge pumping method with the FD-SOI pTFET. When a pulse is applied to the pTFET gate, the charge pumping current is measured in the p+ region with the body contact. The reverse voltage at the n+ region is set to 100Â mV, which is sufficient to eliminate the geometric component.
