Figure 4
From: Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET
(a) Example of two discrete level fluctuations of drain current in the time domain induced by a single trap site. (b) Typical noise power spectral densities of the FD-SOI pTFET without annealing (black) and with HPDA (red). Two fc without annealing can be observed with the superposition of different Lorentzian spectra, and the PSD is steeper with the HPDA than without the HPDA.
