Figure 5
From: Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET
Normalized drain current noise (SID/IDS2) and frequency exponent (γ) as a function of the annealing conditions.
Figure 5 | Scientific Reports
From: Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET
Normalized drain current noise (SID/IDS2) and frequency exponent (γ) as a function of the annealing conditions.
