Figure 6
From: Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET
Time domain behavior of the drain current (IDS) RTN and corresponding histogram of IDS for the FD-SOI pTFET without HPDA (the corresponding histogram of IDS is also illustrated). (a) Multilevel RTN is induced by a slow trap site and fast trap site. (b) Point 1: Enlarged view of the fast trap site from 0.89 to 0.97Â s. (c) Point 2: Enlarged view of the fast trap site from 1.02 to 1.08Â s. (d) Point 3: Enlarged view of the fast trap site from 1.88 to 1.93Â s.
