Figure 8
From: Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET
(a) Charge pumping current as a function of the gate pulse base voltage without and with HPHA and HPDA. The relation between the interface trap density and fast trap sites was verified by using the charge pumping method in pTFET. (b) Comparison of the interface trap density (Nit) extracted by the charge pumping method and trap density extracted by the unified model as a function of the annealing conditions. Nit and Nt are related to the fast and slow trap sites, respectively, and indicate passivation via HPDA and HPHA.
