Figure 1
From: Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Illustration of the fabricated devices (a) 4-in. wafer with around 40,000 memristive devices, (b) arranged in groups of six with different device areas, (c) close-up top view of an individual device showing the top and rear-side electrode contact pads, and the device area is indicated. (d) Cross-sectional sketch along the dashed line in (c) of an example device with the configuration of the functional layers. (e) Normalized and background subtracted XRD intensity spectra of hafnium oxide, deposited with a dynamic (HfO2) and a static (HfO1.8) sputtering method on a Si substrate, indicating the presence of nanocrystalline m-HfO2.
