Figure 2
From: Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Results of three subsequently performed current–voltage measurements on two representative memristive devices with different stoichiometries of the HfOx layer. (a) Measurements on a device with an HfO2 layer and (b) device with an HfO1.8 layer. The voltage was swept piecewise linearly, starting and ending at U = 0 V for 45 s.
