Figure 3
From: Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Dependency of the device resistances RHRS and RLRS on the active device area \(A\) in the high resistive state (HRS) and low resistive state (LRS), respectively, and for both voltage ranges. The plotted mean values were obtained from measurements on many devices, with (a) HfO2 layers and (b) HfO1.8 layers.
