Figure 5
From: Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Comparison of simulations with measurements of the current–voltage characteristics. (a) Illustration of the equivalent circuit of the physics-based compact model used. (b) Comparison of simulations with measurements from Fig. 2 over the small-range and the large-range voltage sweep of the HfO2 device and (c) the HfO1.8 device.
