Figure 7
From: Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Conductance \({\text{G}}/{\text{G}}_{\text{max}}\) normalized to the maximum value \({\text{G}}_{\text{max}}\) of the conductance G as a function of the number of applied voltage pulses Np for (a) the HfO2 device and (b) the HfO1.8 device, and two different amplitude ranges of the applied SET/RESET voltage pulses.
