Figure 8
From: Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Current–voltage loops measured over a series of 100 periods on three representative example devices; (a) device 1: HfO2, device area 202 µm2, large range, (b) device 2: HfO2, device area 252 µm2, small range, and (c) device 3: HfO1.8, device area 102 µm2, small range.
