Table 2 Relative standard deviation of the resistance measurements in Fig. 3 in percent.
From: Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Device area A (\({\mathrm{\mu m}}^{2}\)) | HfO2 | HfO1.8 | ||||||
|---|---|---|---|---|---|---|---|---|
Small range | Large range | Small range | Large range | |||||
LRS | HRS | LRS | HRS | LRS | HRS | LRS | HRS | |
\({15}^{2}\) | 32 | 29 | 27 | 28 | 16 | 25 | 66 | 15 |
\({20}^{2}\) | 35 | 36 | 16 | 14 | 20 | 14 | 27 | 6 |
\({25}^{2}\) | 36 | 34 | 6 | 6 | 12 | 31 | – | |
\({35}^{2}\) | 34 | 39 | 1 | 1 | 9 | 4 | 96 | 17 |
\({50}^{2}\) | 36 | 36 | 5 | 5 | 10 | 6 | 60 | 19 |
