Figure 2 | Scientific Reports

Figure 2

From: Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications

Figure 2

(a) Temperature-triggered resistive switching of VO\(_{2}\) volatile memristor. (b) 3D mesh of VO\(_{2}\) CB device. (c) TCAD simulated I–\(V_{\mathrm{D}}\) characteristics. The associated NDR region has been highlighted. (d) Scheme of VO\(_{2}\) oscillator circuit. Self-oscillatory electrical behavior is associated to a suitable choice of the load-line. (e) ONN.

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