Figure 4
From: Electron-beam patterned calibration structures for structured illumination microscopy
Fluorescent lines patterns confirm improved SIM resolution. (A) Wide field, confocal laser scanning, and structured illumination microscopy images of the interdigitated lines pattern with decreasing spacing. Intensity profiles recorded along the red and the blue dashed lines in (B) and (C) respectively. For all imaging modes, the intensity in between lines increases upon reaching the resolution limit. Dashed lines and numeric values indicate the smallest observed line spacing on all three images, in correspondence with the expected resolution improvement from WF to CLSM and SIM respectively. Sale bars in (A) are 1 µm.
