Figure 5
The erasing endurance characteristics of pentacene OFETs with PVN charge-trapping layer under monochromatic lights of (a) 635 nm, (b) 532 nm and (c) 375 nm (VErasing = 30 V/1 s, VRead = 0 V and VDS = -3 V).
Figure 5 | Scientific Reports
The erasing endurance characteristics of pentacene OFETs with PVN charge-trapping layer under monochromatic lights of (a) 635 nm, (b) 532 nm and (c) 375 nm (VErasing = 30 V/1 s, VRead = 0 V and VDS = -3 V).
