Figure 3
From: Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface
Annealing temperature dependence of the C/S of the nominal SiOx sub./Ta (5Â nm)/Ru (10Â nm)/Ta (5Â nm)/Pt (10Â nm)/Ru (0.2Â nm)/Co (3Â nm)/TiOx (approximately 5Â nm)/Pt (5Â nm) structure.
