Figure 6 | Scientific Reports

Figure 6

From: Photonic synaptic transistors with new electron trapping layer for high performance and ultra-low power consumption

Figure 6

(a–b) ΔEPSC as a function of spike widths for double-layer and triple-layer devices, respectively. (c) Peak of ΔEPSC (ΔEPSCp) as a function of spike widths. (d–e) ΔEPSC when influenced by varying numbers of consecutive light spikes in double-layer and triple-layer devices, respectively. (f) ΔEPSCp as a function of spike number for double-layer and triple-layer devices. (g–h) ΔEPSC measurements at various light intensities for double-layer and triple-layer devices, respectively. (i) ΔEPSCp as a function of light intensity for double-layer and triple-layer devices.

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