Table 1 The measured and mBVD fitted \(S_{11}\) parameters of ZnO-based HBAR resonator and their f.Q values on Si and SiC substrate.
From: Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate
ZnO-HBAR | \(L_m\) (nH) | \(C_m\) (pF) | \(R_m\) (Ohm) | \(C_0\) (pF) | \(R_0\) (Ohm) | \(R_e\) (Ohm) | \(k_{eff}^2\) | f (GHz) | Q | f.Q (Hz) |
|---|---|---|---|---|---|---|---|---|---|---|
Si | 49.1 | 0.151 | 0.013 | 8.9 | 0.014 | 4.8 | 2.0 | 1.85 | 350 | 0.06 \(\times\) 10\(^{13}\) |
SiC | 7.3 | 0.128 | 0.004 | 6.4 | 0.011 | 5.3 | 2.4 | 5.25 | 7725 | 4.1 \(\times\) 10\(^{13}\) |
