Table 2 SCAPS simulation parameters for each layer.

Thickness (µm)

1.5

0.05

0.05

Band gap (eV)

1.4

3.6

3.50

Electron affinity (eV)

4.1

3.9

4.00

Relative dielectric constant

9.0

9.0

9.0

Conduction band effective density of states per cm³

2.2 × 10¹⁸

2.2 × 10¹⁸

2.2 × 10¹⁸

Valence band effective density of states per cm³

1.8 × 10¹⁸

1.8 × 10¹⁹

1.8 × 10¹⁹

Mobility of e^- (cm² s⁻¹ V⁻¹)

1.0 × 10²

1.0 × 10²

2.0 × 10¹

Mobility of hole (e⁺) (cm² s⁻¹ V⁻¹)

1.25 × 10¹

1.25 × 10¹

1.0 × 10¹

Thermal velocity of e⁻ (cm s⁻¹)

1.0 × 10⁷

1.0 × 10⁷

1.0 × 10⁷

Thermal velocity of hole (e⁺)

(cm s⁻¹)

1.0 × 10⁷

1.0 × 10⁷

1.0 × 10⁷

Shallow uniform donor density (n_D) per cm³

0

1.1 × 10¹⁸

1.0 × 10¹⁹

Shallow uniform acceptor density (n_A) per cm³

1.0 × 10¹⁹

0

0

Total defect density (N_t) per cm³

1.0 × 10¹⁵

1.0 × 10¹⁵

1.0 × 10¹⁵