Table 3 SCAPS simulation parameters for different HTLs.

Thickness (µm)

0.050

0.050

0.050

0.050

Band gap (eV)

2.17

1.51

3.1

3.4

Electron affinity (eV)

3.2

4.07

2.1

1.9

Dielectric permittivity (relative)

7.11

18.1

6.5

10.0

CB (conduction band) effective density of states (cm⁻³)

2.02 × 10¹⁷

2.2 × 10¹⁹

2.8 × 10¹⁹

2.2 × 10¹⁸

VB (valence band) effective density of states (cm⁻³)

1.1 × 10¹⁹

5.5 × 10²⁰

1.0 × 10¹⁹

1.8 × 10¹⁸

Electron mobility (cm²/V s)

2.0 × 10²

1.0 × 10¹

1.0 × 10²

1.0 × 10²

Hole mobility (cm²/V s)

8.0 × 10¹

1.0 × 10^–1

4.39 × 10¹

2.50 × 10¹

Electron thermal velocity (cm/s)

1.0 × 10⁷

1.0 × 10⁷

1.0 × 10⁷

1.0 × 10⁷

Hole thermal velocity (cm/s)

1.0 × 10⁷

1.0 × 10⁷

1.0 × 10⁷

1.0 × 10⁷

Shallow uniform donor density (N_D) cm⁻³

0

0

0

0

Shallow uniform acceptor density (N_A) cm⁻³

1.0 × 10¹⁹

1.0 × 10¹⁸

1.0 × 10¹⁸

1.0 × 10¹⁸

Total defect density (N_t) cm⁻³

1.0 × 10¹⁵

1.0 × 10¹⁵

1.0 × 10¹⁵

1.0 × 10¹⁵