Table 1 Structural parameters calculated from XRD measurements for the as-deposited ns-Au, the switched ns-Au/SiOx and switched ns-Au/glass sample and for the ns-Au/SiOx ultra flat sample after unsuccessful application of the forming process.

From: Engineering the structural and electrical interplay of nanostructured Au resistive switching networks by controlling the forming process

Samples

Mean size of crystallites (nm)

Microstrain (%)

Stacking faults (%)

As deposited ns-Au

5.1 ± 0.8

0.7 ± 0.2

13.4 ± 2

Ns-Au switched on SiOx

10.5 ± 0.5

0

5.8 ± 0.7

Ns-Au switched on glass

11.7 ± 1.4

0.4 ± 0.2

6.7 ± 1

Ns-Au formed on ultra flat SiOx

9.8 ± 0.5

0

5.2 ± 0.6

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