Table 2 Average R2 coefficients of the fitting procedures (for all the applied voltage values: ± 5 V, ± 15 V, ± 25 V) for power law and exponential line shapes both for ns-Au/SiOx and ns-Au/glass samples.

From: Engineering the structural and electrical interplay of nanostructured Au resistive switching networks by controlling the forming process

 

R2 power law (ISI)

R2 exponential (ISI)

ΔR2 (ISI)

Discrepancy

Ns-Au/SiOx

0.73 ± 0.07

0.23 ± 0.01

0.5 ± 0.01

0.5 ± 0.05

Ns-Au/glass

0.65 ± 0.01

0.3 ± 0.011

0.35 ± 0.01

0.28 ± 0.03

  1. Difference of the R2 coefficients and discrepancies between the shuffled and unshuffled distributions of the number of switching events per 1 s large bin are reported.
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