Table 3 Thermal and electrical quantities (time, temperature, current density, voltage and energy) measured during the forming of the switching activity for ns-Au/SiOx and ns-Au/glass samples.

From: Engineering the structural and electrical interplay of nanostructured Au resistive switching networks by controlling the forming process

Substrate

tsw [s]

Tsw [°C]

Jsw [A/m2]

Vsw [V]

tsw*Pdiss/sf [J/nm]

Ns-Au/SiOx

90 ± 11

248 ± 8

(3 ± 0.2) ·1010

33 ± 3

40 ± 5

Ns-Au/glass

30 ± 3

430 ± 14

(4 ± 1) ·109

8 ± 1

0.6 ± 0.1

  1. Each value is obtained by averaging over all the tested samples. tsw is defined as the time in which a resistance variation was observed; Tsw, Jsw, Vsw are the pointwise temperature, current density and voltage at the time of the appearance of the switching, while the last column represents the energy employed during the procedure to form the switching activity normalized by the cluster-assembled film thickness.
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