Figure 1:
From: Efficient, high-power, narrow-linewidth, continuous-wave quantum-dot semiconductor comb laser
25G10-layer quantum dot comb: (a) laser schematic; (b) photograph of the laser die-bonded and wire-bonded to a ceramic carrier; (c) L–I–V; and (d) PCE characteristics at different absorber bias values, measured ex-facet and ex-fiber in a butterfly package.
