Figure 2 | Scientific Reports

Figure 2

From: Machine learning-powered compact modeling of stochastic electronic devices using mixture density networks

Figure 2

Prediction of Switching characteristics of heater cryotron. (a) A false-colored scanning electron microscope (SEM) image of heater cryotron device consisting two superconducting nanowires of tungsten silicide (WSi) and a dielectric spacer of \(SiO_2\). (b,c) Illustration of the gate-current-controlled switching mechanism. An enough gate current (\(I_G\)) switches the gate nanowire to its resistive state and generates thermal phonos which eventually causes the switching of the channel from its superconducting to resistive state. (d) Switching model for critical current evaluated at the mean (\(\mu\)) and plus or minus 2 standard deviations (\(\sigma\)) of the resultant distribution and (e) retrapping current of heater cryotron switching model evaluated at the same points.

Back to article page