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Figure 1

From: Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Figure 1

Material analyses and the proposed micro-LED device. (a) Schematic epitaxial structure of the micro-LED samples. (b,c) HAADF-STEM images and EDS mappings of the Al, Ga, and In elements in the yellow and red micro-LED devices, respectively. (d,e) TEM images of hybrid QWs structure for yellow and red samples, respectively. (f) The EDS line scan analysis. (g) Optical microscope image and corresponding schematic diagram of the proposed micro-LED device.

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