Table 1 Comparison of different MoS2 and MoSe2 fabrication methods and the resulting characteristics of the material.
Thin film material | Fabrication method | Fabrication parameters | Characteristics | References |
|---|---|---|---|---|
MoSSe | RF sputtering (using 99.99% purity MoS2 and MoSe2 commercial targets), on thermally oxidized Si/SiO2 substrates | Power = 275 W Dwell time = 15 min Working pressure = 4 × 10–6 bar Substrate temperature = RT Working distance = 25 cm | Thin film Thickness = ~ 200 nm Homogenous sulfur and selenium distribution Sharp interface formation Blue-shifted E1 and A1 Raman modes at 355 cm−1 and 255 cm−1 | This work |
MoS2 | RF sputtering on Si/SiO2 substrates | Power = 275 W Dwell time = 5 min Working pressure = 4 × 10–6 bar Substrate temperature = RT Working distance = N/A | Thin film Thickness = ~ 105 nm Highly crystalline MoS2 E12g and A1g normal Raman modes at 378 cm−1 and 407 cm−1 | |
MoS2 | DC sputtering on glass and Si substrate | Power = 30 W, 40 W, 60 W Dwell time = 1 s–5 min Working pressure = 6.7 × 10–6 bar, 13.3 × 10 -6 bar, 19.5 × 10–6 bar Substrate temperature = RT-400 °C Working distance = 5 cm | Thin film Thickness = 1–440 nm Nanocrystalline edge-rich E12g and A1g normal Raman modes at ~ 376 cm−1 and ~ 408 cm−1 No direct relation between substrate and resulting crystallinity Higher crystallinity with higher deposition time | |
MoS2 | RF sputtering (MoS2 target of 99.95% purity) on amorphous SiO2 and (002) oriented graphite substrates | Power = N/A Dwell time = N/A Working pressure = 2 × 10–5 bar Substrate temperature = 350 °C Working distance = 7 cm | Continuous MoS2 films Thickness = 3–6 molecular layers MoS2 growth parallel to the basal plane | |
MoS2 | RF sputtering on SiO2/Si, quartz, and sapphire substrates | Power = 25 W Dwell time = 1, 3, 5 and 15 min Working pressure = 1.33 × 10–5 bar Substrate temperature = RT to 500 °C Working distance = N/A | Bilayer to few layer MoS2 domains Post-deposition annealing at 700 °C in a sulfur-rich atmosphere to improve crystallinity Improved carrier mobility | |
MoSe2 | DC sputtering on quartz and Si substrates | Power = 75 W Dwell time = 4 min Working pressure = 6.7 × 10–6 bar Substrate temperature = RT Working distance = 5 cm | Thin film with wall-like structures Thickness = 325 nm Preferential growth along the c-axis E12g and A1g normal Raman modes at ~ 242 cm−1 and ~ 284 cm−1 | |
MoSe2 | RF co-sputtering of Mo and Se targets with 99.99% purity on Si substrate | Power = 15–45 W for Mo/15 to 25 W for Se target Dwell time = N/A Working pressure = 1.33 × 10–5 bar Substrate temperature = N/A Working distance = N/A | Annealing improve material’s crystallinity Thickness = 200 nm Formation of MoO3 | |
MoSe2 | CVD using Selenium pellets (99.9%) and MoO3) (99%) powder as precursors on Si/SiO2 substrate and growth at 750 °C | Power = N/A Dwell time = 20 min Working pressure = N/A Substrate temperature = N/A Working distance = N/A | Triangle domains of MoSe2 Thickness = 0.8 nm E12g and A1g normal Raman modes at ~ 239 cm−1 and ~ 301 cm−1 |
