Figure 1
Simulated (including Poisson statistics) RBS spectra of (a) a 48 nm Ni/Si bilayer (black crosses) and a 137 nm NiSi/Si bilayer (black open circles) and (b) a 48 nm Ni/117 nm Ge1−Sn/Ge multilayer (black crosses) and a 22 nm Ni/49 nm Ni5(Ge1−Sn)3/40 nm NiGe1−Sn/73 nm Ge1−Sn/Ge multilayer (black open circles) with x=0.08, using a 2.7 MeV He\(^{2+}\) beam and detection in the G\(_1\) geometry, as shown in the inset in (a). The Ni (green), Si and Ge (purple, in (a) and (b), resp.) and Sn (red) contributions to the RBS spectra are highlighted. The arrows indicate the respective elemental depth profiles, starting from the sample surface. The inset in (b) illustrates the difference in the Sn signal for the two spectra.
