Figure 1
From: Challenges for room temperature operation of electrically pumped GeSn lasers
(a) Heterostructure band edge diagram (unbiased, at 85 K, atmospheric pressure) illustrating confinement of electrons by the SiGeSn capping layer and hole confinement by a graded GeSn buffer layer. (b) shows the conduction band edges modelled at 0 (solid), 1 (dashed) and 2 kbar (dotted) for the \(\Gamma\)- (black) and L-valleys (red), showing similar pressure coefficients for like valleys in the cap and active layers.
