Table 3 The SiO2 content of RS preforms after post-oxidization at different temperatures for 2h.

From: Improving thermal conductivity of Al/SiC composites by post-oxidization of reaction-bonded silicon carbide preforms

Temperature (°C)

Preforms treated by post-oxidization at different temperatures

500

600

700

800

SiO2 content (wt%)

/

/

0.13 ± 0.02

0.57 ± 0.12

  1. The content was determined by semi-quantitative analysis of XRD data. The slash sign “/” represents that the phase content is below to the detection limit of the XRD instrument.
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