Fig. 9
From: Phase transitions, Dirac and Weyl semimetal states in Mn1−xGexBi2Te4
Theoretically calculated changes in the electronic structure of AFM TI \(\textrm{Mn}_{1-x} \textrm{Ge}_x \textrm{Bi}_2 \textrm{Te}_4\) with varying Ge concentration under the condition of alternate replacement of Mn atoms with Ge through the Mn layer. Model depictions of the placement of Ge and Mn atoms are shown in the insets above (red and blue colors denote AFM ordering of Mn layers). For the Ge atom concentration of 38%, a more detailed representation is shown in the region of the intersection of states in the \(\varGamma \!Z\) direction of the BZ, characteristic of a WSM.
