Fig. 1
From: Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
(a) J-V characteristics measured for the Schottky diode before (solid lines) and after (dashed lines) irradiation for 300 K (black lines) and 411 K (red) lines; (b) room temperature J-V characteristics measured for the Schottky diode and the NiO/Ga2O3 HJ diode; (c) J-V characteristics measured for the HJ diode at room temperature (black line), 412 K (red line), 113 K (blue line) after irradiation; (d) comparison of room temperature J-V characteristics of irradiated Schottky diode and irradiated HJ diode.
