Fig. 2
From: Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
(a) DLTS spectra measured at 100 kHz for the Schottky diode with bias − 20 V and pulse 1 V, with bias − 1 V and pulse 1 V; (b) DLTS spectra measured with bias − 5 V and pulse − 1 V before and after irradiation, the spectra shown for two time windows settings of 0.15 s/1.5 s and 1.5 s/15 s; (c) the spectra rebuilt so as to show traps concentrations for three bias/pulse settings; (d) changes in trap types and concentrations after irradiation.
