Fig. 9
From: Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
(a) changes in concentration profiles of the irradiated HJ diode annealed at temperatures from 450 to 600 K with a 30 K step with the applied reverse voltage of − 10 V, also shown the results of furnace annealing without bias at 673 K and 723 K; (b) the data for another HJ diode annealed without bias. (c) comparison of DLTS spectra measured on two irradiated HJ diodes annealed to 600 K, one with − 10 V applied, the other without bias; (d) comparison of annealing with bias at 600 K and without bias at 673 K.
